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SGU15N40LTU

SGU15N40LTU

SGU15N40LTU

ON Semiconductor

SGU15N40LTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGU15N40LTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation45W
Current Rating130A
Element ConfigurationSingle
Power Dissipation45W
Input Type Standard
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage400V
Collector Emitter Saturation Voltage130V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 130A
IGBT Type Trench
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:8190 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.106451$1.106451
10$1.043822$10.43822
100$0.984738$98.4738
500$0.928998$464.499
1000$0.876413$876.413

SGU15N40LTU Product Details

SGU15N40LTU Descriptions


The ON SEMI SGU15N40LTU is an Insulated Gate Bipolar Transistor with a trench gate structure that provides superior conduction and switching

performance in comparison with transistors having a planar gate structure.



SGU15N40LTU Features


  • High input impedance

  • High peak current capability (130A)

  • Easy gate drive



SGU15N40LTU Applications


  • Strobe flash


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