STGW30M65DF2 Description
These devices are IGBTs developed using anadvanced proprietary trench gate field-stopstructure. The devices are part of the M seriesIGBTs, which represent an optimal balancebetween inverter system performance andefficiency where low-loss and short-circuitfunctionality are essential. Furthermore, thepositive VCE(sat) temperature coefficient and tightparameter distribution result in safer parallelingoperation.
STGW30M65DF2 Features
· 6 μs of minimum short-circuit withstand time
· VCE(sat) = 1.55 V (typ.) @ IC = 30 A
· Tight parameters distribution
· Safer paralleling
· Low thermal resistance
· Soft and very fast recovery antiparallel diode
STGW30M65DF2 Applications
· Motor control
· UPS
· PFC
