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FGH40N60SMD

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

FGH40N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH40N60SMD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation349W
Base Part Number FGH40N60
Number of Elements 1
Rise Time-Max 28ns
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 349W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 36 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Turn On Time37 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 132 ns
IGBT Type Field Stop
Gate Charge119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1222 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.48000$5.48
10$4.94300$49.43
450$3.88002$1746.009
900$3.49920$3149.28

FGH40N60SMD Product Details

FGH40N60SMD Descritption


The ON Semiconductor FGH40N60SMD IGBT is the ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.



FGH40N60SMD Features


  • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A

  • High input impedance

  • Fast switching: EOFF =6.5uJ/A

  • Tightened parameter distribution

  • Maximum junction temperature : TJ=175°C

  • Positive temperature co-efficient for an easy parallel operating

  • High current capability

  • RoHS compliant



FGH40N60SMD Applications


  • Uninterruptible Power Supply

  • Energy Generation & Distribution

  • Other Industrial


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