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FGA70N30TTU

FGA70N30TTU

FGA70N30TTU

ON Semiconductor

FGA70N30TTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA70N30TTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation201W
Element ConfigurationSingle
Input Type Standard
Collector Emitter Voltage (VCEO) 1.5V
Collector Emitter Breakdown Voltage300V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 20A
IGBT Type Trench
Gate Charge125nC
Current - Collector Pulsed (Icm) 160A
RoHS StatusRoHS Compliant
In-Stock:2738 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.32000$2.32
500$2.2968$1148.4
1000$2.2736$2273.6
1500$2.2504$3375.6
2000$2.2272$4454.4
2500$2.204$5510

FGA70N30TTU Product Details

FGA70N30TTU Description

Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.



FGA70N30TTU Features

High current capability

Low saturation voltage: VCE(sat) =1.7V @ IC = 70A

High input impedance

Fast switching

RoHS Compliant



FGA70N30TTU Applications

PDP System


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