Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SGS23N60UFDTU

SGS23N60UFDTU

SGS23N60UFDTU

ON Semiconductor

SGS23N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGS23N60UFDTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 14 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation73W
Current Rating12A
Base Part Number SG*23N60
Number of Elements 1
Element ConfigurationSingle
Power Dissipation73W
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 23A
Reverse Recovery Time 60ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Turn On Time55 ns
Test Condition 300V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Gate Charge49nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/60ns
Switching Energy 115μJ (on), 135μJ (off)
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2860 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.539290$1.53929
10$1.452160$14.5216
100$1.369962$136.9962
500$1.292417$646.2085
1000$1.219262$1219.262

SGS23N60UFDTU Product Details

SGS23N60UFDTU Description


SGS23N60UFDTU is a single IGBT from the manufacturer ON Semiconductor with a breakdown voltage of 600V. Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high-speed switching is a required feature.



SGS23N60UFDTU Features


  • High-speed switching

  • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A

  • High input impedance

  • CO-PAK, IGBT with FRD: try = 42ns (typ.)



SGS23N60UFDTU Applications


  • AC & DC Motor controls

  • general purpose inverters

  • Robotics

  • servo controls


Get Subscriber

Enter Your Email Address, Get the Latest News