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IRG7PH50K10D-EPBF

IRG7PH50K10D-EPBF

IRG7PH50K10D-EPBF

Infineon Technologies

IRG7PH50K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH50K10D-EPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2013
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation400W
Rise Time-Max 80ns
Element ConfigurationSingle
Input Type Standard
Power - Max 400W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 90A
Reverse Recovery Time 130 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 35A
Gate Charge300nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 90ns/340ns
Switching Energy 2.3mJ (on), 1.6mJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 110ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:1357 items

IRG7PH50K10D-EPBF Product Details

IRG7PH50K10D-EPBF Description

IRG7PH50K10D-EPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7PH50K10D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRG7PH50K10D-EPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG7PH50K10D-EPBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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