IRG4PC50FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PC50FDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tray
Published
2001
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
ULTRA FAST SOFT RECOVERY
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
200W
Current Rating
70A
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
55 ns
Transistor Application
POWER CONTROL
Rise Time
25ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
240 ns
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
70A
Reverse Recovery Time
50 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Turn On Time
86 ns
Test Condition
480V, 39A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 39A
Turn Off Time-Nom (toff)
660 ns
Gate Charge
190nC
Current - Collector Pulsed (Icm)
280A
Td (on/off) @ 25°C
55ns/240ns
Switching Energy
1.5mJ (on), 2.4mJ (off)
Fall Time-Max (tf)
210ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2234 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.79000
$8.79
25
$7.57440
$189.36
100
$6.57680
$657.68
500
$5.72700
$2863.5
IRG4PC50FDPBF Product Details
IRG4PC50FDPBF Description
The Infineon IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4PC50FDPBF Features
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
IRG4PC50FDPBF Applications
Motor Drive & Control
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