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IKW30N60TAFKSA1

IKW30N60TAFKSA1

IKW30N60TAFKSA1

Infineon Technologies

IKW30N60TAFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW30N60TAFKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2014
Series TrenchStop®
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation187W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KW30N60
Reference Standard AEC-Q101
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 187W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 143 ns
Collector Emitter Breakdown Voltage600V
Turn On Time50 ns
Test Condition 400V, 30A, 10.6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 30A
Turn Off Time-Nom (toff) 382 ns
IGBT Type Trench Field Stop
Gate Charge167nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 23ns/254ns
Switching Energy 1.46mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.862000$5.862
10$5.530189$55.30189
100$5.217159$521.7159
500$4.921848$2460.924
1000$4.643253$4643.253

IKW30N60TAFKSA1 Product Details

IKW30N60TAFKSA1 Description


IKW30N60TAFKSA1 is a type of IGBT with integrated diode in packages offering space saving advantage, which is optimized for automotive applications. It is designed based on TRENCHSTOP and Fieldstop technology for 600V applications. Low switching losses can be ensured based on its optimized Eon, Eoff, and Qrr. The IKW30N60TAFKSA1 IGBT is characterized by very tight parameter distribution, short circuit capability of 5μs, maximum junction temperature 175°C, and more.



IKW30N60TAFKSA1 Features


Very tight parameter distribution

Maximum junction temperature 175°C

Dynamically stress tested

Short circuit capability of 5μs



IKW30N60TAFKSA1 Applications


Main inverter

Air-Con compressor

PTC heater

Motor drives


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