SGP23N60UFTU Description
SGP23N60UFTU is a member of the UF series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input inpedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including general-purpose inverters and PFC requiring high-speed switching.
SGP23N60UFTU Features
Low conduction
Low switching losses
High input inpedance
Low saturation voltage
Package: TO-220
SGP23N60UFTU Applications
General inverter
PFC
