STGB4M65DF2 Description
The STGB4M65DF2 is a Trench gate field-stop IGBT, M series 650 V, 4 A low loss. This item is an IGBT that was created employing an innovative, exclusive trench gate field-stop structure. The component is an IGBT from the M series, which offers the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, safer paralleling operation is produced by the tight parameter distribution and positive VCE(sat) temperature coefficient.
STGB4M65DF2 Features
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
6 μs of short-circuit withstand time
VCE(sat) = 1.6 V (typ.) @ IC = 4 A
Tight parameter distribution
STGB4M65DF2 Applications
