NGTB50N60SWG Descriptipn
The NGTB50N60SWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop (FS) Trench structure. It performs exceptionally well in demanding switching applications. Applications requiring half-bridge resonance are ideally suited for the IGBT. A soft and fast co-packaged free wheeling diode with a low forward voltage is incorporated into the device.
NGTB50N60SWG Features
Low Gate Charge
Soft, Fast Free Wheeling Diode
This is a Pb?Free Device
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
NGTB50N60SWG Applications
Inductive Heating
Soft Switching
Alternative Energy
Power Management
Motor Drive & Control
