HGTP7N60A4 Description
HGTP7N60A4 devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly.
HGTP7N60A4 Features
? Operation at 390V, 7A, >100kHz
? 390V, 5A, 200kHz operation
? SOA Switching Capability of 600V
HGTP7N60A4 Applications
Switching applications
