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SGU20N40LTU

SGU20N40LTU

SGU20N40LTU

ON Semiconductor

SGU20N40LTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGU20N40LTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2001
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation45W
Current Rating150A
Element ConfigurationSingle
Power Dissipation45W
Input Type Standard
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage400V
Collector Emitter Saturation Voltage4.5V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 150A
IGBT Type Trench
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:5372 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.994421$0.994421
10$0.938133$9.38133
100$0.885031$88.5031
500$0.834935$417.4675
1000$0.787674$787.674

SGU20N40LTU Product Details

SGU20N40LTU Description

SGU20N40LTU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGU20N40LTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGU20N40LTU has the common source configuration.

SGU20N40LTU Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SGU20N40LTU Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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