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SBCW30LT1G

SBCW30LT1G

SBCW30LT1G

ON Semiconductor

SBCW30LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SBCW30LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation300mW
Base Part Number BCW30
Pin Count3
Configuration Single
Power - Max 300mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 215 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage32V
Collector Base Voltage (VCBO) 32V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:130250 items

Pricing & Ordering

QuantityUnit PriceExt. Price

SBCW30LT1G Product Details

SBCW30LT1G Overview


This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

SBCW30LT1G Features


the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA

SBCW30LT1G Applications


There are a lot of ON Semiconductor SBCW30LT1G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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