SBC856BLT3G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A maximum collector current of 100mA volts can be achieved.
SBC856BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC856BLT3G Applications
There are a lot of ON Semiconductor SBC856BLT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
