FJV42MTF Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.There is a breakdown input voltage of 350V volts that it can take.Maximum collector currents can be below 500mA volts.
FJV42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz
FJV42MTF Applications
There are a lot of ON Semiconductor FJV42MTF applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
