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KSD471AYTA

KSD471AYTA

KSD471AYTA

ON Semiconductor

KSD471AYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD471AYTA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation800mW
Terminal Position BOTTOM
Current Rating1A
Frequency 130MHz
Base Part Number KSD471
Number of Elements 1
Element ConfigurationSingle
Power Dissipation800mW
Transistor Application AMPLIFIER
Gain Bandwidth Product130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage30V
Transition Frequency 130MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:88206 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.637534$2.637534
10$2.488240$24.8824
100$2.347396$234.7396
500$2.214525$1107.2625
1000$2.089174$2089.174

KSD471AYTA Product Details

KSD471AYTA Overview


This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).The part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.In extreme cases, the collector current can be as low as 1A volts.

KSD471AYTA Features


the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

KSD471AYTA Applications


There are a lot of ON Semiconductor KSD471AYTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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