BC857T,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier device package SC-75 comes with the product.The device exhibits a collector-emitter breakdown at 45V.
BC857T,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the supplier device package of SC-75
BC857T,115 Applications
There are a lot of NXP USA Inc. BC857T,115 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
