KSA708CYTA Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at -8V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-700mA).50MHz is present in the transition frequency.Input voltage breakdown is available at 60V volts.A maximum collector current of 700mA volts is possible.
KSA708CYTA Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz
KSA708CYTA Applications
There are a lot of ON Semiconductor KSA708CYTA applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
