PBSS5250T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 100mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 100MHz.This device can take an input voltage of 50V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
PBSS5250T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 100mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5250T,215 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
