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PZT2907AT3G

PZT2907AT3G

PZT2907AT3G

ON Semiconductor

PZT2907AT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PZT2907AT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation1.5W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-600mA
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PZT2907A
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15611 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.063040$0.06304
500$0.046353$23.1765
1000$0.038627$38.627
2000$0.035438$70.876
5000$0.033120$165.6
10000$0.030809$308.09
15000$0.029796$446.94
50000$0.029298$1464.9

PZT2907AT3G Product Details

PZT2907AT3G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.As it features a collector emitter saturation voltage of -1.6V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 200MHz in the part.Breakdown input voltage is 60V volts.A maximum collector current of 600mA volts is possible.

PZT2907AT3G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

PZT2907AT3G Applications


There are a lot of ON Semiconductor PZT2907AT3G applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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