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NTMD6N02R2G

NTMD6N02R2G

NTMD6N02R2G

ON Semiconductor

NTMD6N02R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTMD6N02R2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 45 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 35MOhm
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation2W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating6A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTMD6N02
Pin Count8
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time12 ns
Power - Max 730mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V
Current - Continuous Drain (Id) @ 25°C 3.92A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time50ns
Fall Time (Typ) 80 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 360 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 900 mV
Height 1.5mm
Length 5mm
Width 4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9510 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.414481$0.414481
10$0.391020$3.9102
100$0.368887$36.8887
500$0.348006$174.003
1000$0.328308$328.308

NTMD6N02R2G Product Details

NTMD6N02R2G Description


The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.

NTMD6N02R2G Features


? Ultra Low RDS(on)

? Higher Efficiency Extending Battery Life

? Logic Level Gate Drive

? Miniature Dual SOIC?8 Surface Mount Package

? Diode Exhibits High Speed, Soft Recovery

? Avalanche Energy Specified

? SOIC?8 Mounting Information Provided

? Pb?Free Package is Available


NTMD6N02R2G Applications


? DC?DC Converters

? Low Voltage Motor Control

? Power Management in Portable and Battery?Powered Products,for example, Computers, Printers, Cellular and Cordless Telephones

and PCMCIA Cards

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