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SSM6N815R,LF

SSM6N815R,LF

SSM6N815R,LF

Toshiba Semiconductor and Storage

SSM6N815R,LF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

SSM6N815R,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Operating Temperature150°C
PackagingTape & Reel (TR)
Series U-MOSVIII-H
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.8W Ta
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 103m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V
Drain to Source Voltage (Vdss) 100V
FET Feature Logic Level Gate, 4V Drive
RoHS StatusRoHS Compliant
In-Stock:15626 items

Pricing & Ordering

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SSM6N815R,LF Product Details

SSM6N815R, LF Description


SSM6N815R, LF is a 100v Silicon N-Channel MOSFET. The transistor SSM6N815R, LF can be applied in Power Management Switches due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SSM6N815R, LF is in the TSOP6F package with 1.4W Power dissipations.



SSM6N815R, LF Features


4.0 V drive

Low drain-source on-resistance:

RDS(ON) = 115 mΩ (typ.) (@VGS = 4.0 V)

RDS(ON) = 101 mΩ (typ.) (@VGS = 4.5 V)

RDS(ON) = 84 mΩ (typ.) (@VGS = 10 V)



SSM6N815R, LF Applications


Power Management Switches

Industrial

Electronic point of sale (EPOS)

Enterprise systems

Enterprise machine


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