IRF7341TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
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IRF7341TRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
50mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4.7A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
IRF7341PBF
Number of Elements
2
Row Spacing
6.3 mm
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
8.3 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Rise Time
3.2ns
Fall Time (Typ)
13 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
4.7A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5.1A
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Avalanche Energy Rating (Eas)
140 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Recovery Time
90 ns
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
1 V
Height
1.75mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
In-Stock:6422 items
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Quantity
Unit Price
Ext. Price
IRF7341TRPBF Product Details
IRF7341TRPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The SO-8 has been upgraded thermally and has multiple-die capability thanks to a redesigned leadframe, making it appropriate for a range of power applications. Multiple devices can be employed in an application with significantly less board space thanks to these enhancements. The container is suitable for vapor phase, infrared, and wave soldering. In a typical PCB mount application, power dissipation of more than 0.8W is achievable.
IRF7341TRPBF Features
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free
IRF7341TRPBF Applications
Power application
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