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FDMA1027P

FDMA1027P

FDMA1027P

ON Semiconductor

FDMA1027P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA1027P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation800mW
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.4W
Case Connection DRAIN
Turn On Delay Time9 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time11ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 2mm
Width 2mm
RoHS StatusROHS3 Compliant
In-Stock:8781 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.134562$0.134562
10$0.126946$1.26946
100$0.119760$11.976
500$0.112981$56.4905
1000$0.106586$106.586

FDMA1027P Product Details

FDMA1027P Description


The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. Bidirectional current flow is possible when connected in a typical common source configuration. MicroFET 2x2 packages provide excellent thermal performance in terms of physical size and are ideal for linear mode applications.


FDMA1027P Features

-3.0 A, -20V

RDS(ON) = 120 m|? @ VGS = -4.5 V

RDS(ON) = 160 m|? @ VGS = -2.5 V

RDS(ON) = 240 m|? @ VGS = -1.8 V

Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm

RoHS compliant

Free from halogenated compounds and antimonyoxides


FDMA1027P Applications


This product is general usage and suitable for many different applications.


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