Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTLJD3119CTBG

NTLJD3119CTBG

NTLJD3119CTBG

ON Semiconductor

NTLJD3119CTBG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTLJD3119CTBG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series µCool™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation710mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTLJD3119C
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation710mW
Turn On Delay Time5.2 ns
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 271pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.6A 2.3A
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
Rise Time13.2ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 13.2 ns
Turn-Off Delay Time 13.7 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.8A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 18A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 750μm
Length 2mm
Width 2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8287 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.264206$3.264206
10$3.079440$30.7944
100$2.905132$290.5132
500$2.740691$1370.3455
1000$2.585557$2585.557

NTLJD3119CTBG Product Details

NTLJD3119CTBG Description


Complementary power MOSFET is a device that contains both P-channel and N-channel MOSFET in the same package. This makes them very suitable for low-power non-isolated point loads.


NTLJD3119CTBG Features


? Complementary N?Channel and P?Channel MOSFET

? WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

? Footprint Same as SC?88 Package

? Leading Edge Trench Technology for Low On Resistance

? 1.8 V Gate Threshold Voltage

? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

? This is a Pb?Free Device


NTLJD3119CTBG Applications


? Synchronous DC?DC Conversion Circuits

? Load/Power Management of Portable Devices like PDA’s, Cellular

Phones and Hard Drives

? Color Display and Camera Flash Regulators






Get Subscriber

Enter Your Email Address, Get the Latest News