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FDMS8090

FDMS8090

FDMS8090

ON Semiconductor

FDMS8090 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMS8090 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 250mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation2.2W
JESD-30 Code R-PDSO-N4
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation59W
Case Connection DRAIN
Turn On Delay Time10.6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time4.6ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.013Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 5mm
Width 6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1271 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$30.031920$30.03192
10$28.332000$283.32
100$26.728302$2672.8302
500$25.215379$12607.6895
1000$23.788094$23788.094

FDMS8090 Product Details

FDMS8090 Description

This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.

FDMS8090 Features

Max rDS(on) = 13 m|? at VGS = 10 V, ID = 10 A

Max rDS(on) = 20 m|? at VGS = 6 V, ID = 8 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

100% UIL tested

RoHS Compliant


FDMS8090 Applications


DC-DC Merchant Power Supply






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