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IRF9910PBF

IRF9910PBF

IRF9910PBF

Rochester Electronics, LLC

N-CHANNEL POWER MOSFET

SOT-23

IRF9910PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A 12A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
FET Feature Logic Level Gate
RoHS StatusROHS3 Compliant
In-Stock:19907 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About IRF9910PBF

The IRF9910PBF from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features N-CHANNEL POWER MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF9910PBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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