IRF7329TRPBF Description
Intrative Rectifier's new P-channel HEXFET power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with the well-known rugged device design of HEXFET Power MOSFET, provides designers with an extremely efficient and reliable device for use in a variety of applications.Over the years, SO-8 has been improved through customized thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of powerapplications.Withtheseimprovementsmultiple devices that can be used to greatly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology.
IRF7329TRPBF Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
IRF7329TRPBF Applications
making it an ideal choice for a variety of powerapplications
