Name: NTJS3151PT1G
Brand: ON Semiconductor
SKU: NTJS3151PT1G
Price: 0.48000 USD
Availability: InStock

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NTJS3151PT1G

Manufacturer part number:NTJS3151PT1G

Manufacturer:ON Semiconductor

Description:NTJS3151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJS3151PT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	45mOhm
Subcategory	Other Transistors
Voltage - Rated DC	-12V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-3.3A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	860 ps
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 12V
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 4.5V
Rise Time	1.5ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	1.5 ns
Turn-Off Delay Time	3.5 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2.7A
Drain to Source Breakdown Voltage	-12V
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTJS3151PT1G Product Details

NTJS3151PT1G Description

NTJS3151PT1G is a member of the family of P-channel power MOSFETs developed by ON Semiconductor based on the leading trench technology for low RDS (on) extending battery life. Moreover, it is able to provide fast switching for increased circuit efficiency. Due to its specific features, NTJS3151PT1G can be used for high-side load switches, cell phones, digital cameras, and more.