FDS4685 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDS4685 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
27MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-8.2A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
27m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1872pF @ 20V
Current - Continuous Drain (Id) @ 25°C
8.2A Ta
Gate Charge (Qg) (Max) @ Vgs
27nC @ 5V
Rise Time
11ns
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
8.2mA
Threshold Voltage
-1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-40V
Nominal Vgs
-1.6 V
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:8098 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDS4685 Product Details
FDS4685 Description
FDS4685 P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. FDS4685 has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
FDS4685 Features
-8.2A, -40V
RDS(ON) = 0.027 mΩ @ VGS = -10V
RDS(ON) = 0.035 mΩ @ VGS = -4.5V
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS4685 Applications
Power management
Load switch
Battery protection
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers
