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FDS4435A

FDS4435A

FDS4435A

ON Semiconductor

FDS4435A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS4435A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
Series PowerTrench®
JESD-609 Code e4
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 17mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-9A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 5V
Rise Time15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Nominal Vgs -1.7 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:5407 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.21000$1.21
500$1.1979$598.95
1000$1.1858$1185.8
1500$1.1737$1760.55
2000$1.1616$2323.2
2500$1.1495$2873.75

FDS4435A Product Details

FDS4435A Description


The FDS4435A is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench? process. It has been specially tailored to minimize the ON-state resistance and yet maintain a low gate charge for superior switching performance. The onsemi FDS4435A is well suited for load switching, battery charging circuits, and DC-to-DC conversion.



FDS4435A Features


  • ?9 A, ?30 V. RDS(ON) = 0.017Ω @ VGS = ?10 V

RDS(ON) = 0.025Ω @ VGS = ?4.5 V

  • Low Gate Charge (21 nC Typical).

  • High-Performance Trench Technology for Extremely Low RDS(ON)

  • High Power and Current Handling Capability

  • This Device is Pb?Free and RoHS Compliant



FDS4435A Applications


  • Power Management

  • Industrial

  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives


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