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GA10SICP12-263

GA10SICP12-263

GA10SICP12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A TO263-7

SOT-23

GA10SICP12-263 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Operating Temperature175°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiC (Silicon Carbide Junction Transistor)
Power Dissipation-Max 170W Tc
Rds On (Max) @ Id, Vgs 100m Ω @ 10A
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Drain to Source Voltage (Vdss) 1200V
Continuous Drain Current (ID) 25A
RoHS StatusRoHS Compliant
In-Stock:330 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$27.91740$13958.7

About GA10SICP12-263

The GA10SICP12-263 from GeneSiC Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS SJT 1200V 25A TO263-7.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GA10SICP12-263, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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