FDS6910 Description
These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6910 Features
7.5A, 30V
?RDS(ON) = 13 mΩ @ VGS = 10V
?RDS(ON) = 17 mΩ @ VGS = 4.5V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6910 Applications
This product is general usage and suitable for many different applications.
