SUD50P06-15-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website
SOT-23
SUD50P06-15-GE3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
TrenchFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
2.5W Ta 113W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4950pF @ 25V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
165nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
175 ns
Continuous Drain Current (ID)
-50A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Pulsed Drain Current-Max (IDM)
80A
Max Junction Temperature (Tj)
150°C
Height
2.507mm
RoHS Status
ROHS3 Compliant
In-Stock:2570 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SUD50P06-15-GE3 Product Details
SUD50P06-15-GE3 Description
The SUD50P06-15-GE3 is a P-Channel 60 V (D-S) MOSFET. When it comes to metal-oxide-semiconductor field-effect transistors (MOSFETs), a power MOSFET is a special kind that is made to manage large amounts of power. Its key benefits are high switching speed and good efficiency at low voltages when compared to other power semiconductor devices like an insulated-gate bipolar transistor (IGBT) or a thyristor. It shares an accessible gate with the IGBT that makes it simple to drive. They occasionally have low gain to the point where a gate voltage greater than the voltage under control is required.
SUD50P06-15-GE3 Features
TrenchFET® power MOSFET
Low gate drive power
Fast switching speed
Easy advanced paralleling capability
Wide bandwidth, ruggedness
Easy drive
Simple biasing
Ease of application
Ease of repair
SUD50P06-15-GE3 Applications
Load switch
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters.
Automotive applications
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control
Related Products
Similar Transistors - FETs, MOSFETs - Single from Vishay Siliconix and other manufacturers
