SSM3K324R,LF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 190pF @ 30V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
SSM3K324R,LF Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage
SSM3K324R,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K324R,LF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
