BSC042N03LSGATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 93A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 20A.Peak drain current is 372A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 30V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
BSC042N03LSGATMA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 93A
based on its rated peak drain current 372A.
BSC042N03LSGATMA1 Applications
There are a lot of Infineon Technologies
BSC042N03LSGATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
