NSVBC857BTT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.A maximum collector current of 100mA volts is possible.
NSVBC857BTT1G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
NSVBC857BTT1G Applications
There are a lot of ON Semiconductor NSVBC857BTT1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
