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2SA1419T-TD-E

2SA1419T-TD-E

2SA1419T-TD-E

ON Semiconductor

2SA1419T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1419T-TD-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-243AA
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code8541.21.00.75
Max Power Dissipation500mW
Terminal Position SINGLE
Terminal FormFLAT
Reach Compliance Code not_compliant
Base Part Number 2SA1419
Pin Count3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage160V
Transition Frequency 120MHz
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9858 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.023777$2.023777
10$1.909224$19.09224
100$1.801155$180.1155
500$1.699203$849.6015
1000$1.603021$1603.021

2SA1419T-TD-E Product Details

2SA1419T-TD-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 120MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

2SA1419T-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz

2SA1419T-TD-E Applications


There are a lot of ON Semiconductor 2SA1419T-TD-E applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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