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JANTX2N6284

JANTX2N6284

JANTX2N6284

Microsemi Corporation

JANTX2N6284 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6284 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/504
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 175W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 1250 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage3V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:178 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$60.89000$60.89

JANTX2N6284 Product Details

JANTX2N6284 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1250 @ 10A 3V.A collector emitter saturation voltage of 3V ensures maximum design flexibility.A VCE saturation (Max) of 3V @ 200mA, 20A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.A transition frequency of 4MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 20A volts at Single BJT transistors maximum.

JANTX2N6284 Features


the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz

JANTX2N6284 Applications


There are a lot of Microsemi Corporation JANTX2N6284 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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