BC857BU3T106 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC857BU3T106 Features
the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
BC857BU3T106 Applications
There are a lot of ROHM Semiconductor BC857BU3T106 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
