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PBSS5360XX

PBSS5360XX

PBSS5360XX

Nexperia USA Inc.

PBSS5360XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5360XX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature-55°C~150°C TA
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count3
Power - Max 1.35W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3A 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 3A, 300mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 65MHz
RoHS StatusROHS3 Compliant
In-Stock:13859 items

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PBSS5360XX Product Details

PBSS5360XX Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 3A 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

PBSS5360XX Features


the DC current gain for this device is 80 @ 3A 5V
the vce saturation(Max) is 550mV @ 3A, 300mA

PBSS5360XX Applications


There are a lot of Nexperia USA Inc. PBSS5360XX applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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