NJW1302G Overview
In this device, the DC current gain is 75 @ 3A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 800mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.30MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 15A volts.
NJW1302G Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
NJW1302G Applications
There are a lot of ON Semiconductor NJW1302G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
