NGTB15N120IHRWG Description
NGTB15N120IHRWG developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB15N120IHRWG is able to provide high efficiency in resonant or soft switching applications.
NGTB15N120IHRWG Features
A rugged co?packaged free wheeling diode
A robust and cost-effective Field Stop (FS) Trench construction
Low on?state voltage
Minimal switching loss
NGTB15N120IHRWG Applications
Inductive heating
Soft switching
Consumer appliances
