NGTB40N65IHRTG Description
This Insulated Gate Bipolar Transistor (IGBT) features robust and cost-effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost-effective solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
NGTB40N65IHRTG Features
Extremely Efficient Trench with Field Stop Technology
Low Conduction Design for Soft Switching Application
Reduced Power Dissipation in Inducting Heating Application
Reliable and Cost-Effective Single Die Solution
This is a Pb?Free Device
NGTB40N65IHRTG Applications
Inductive Heating
Air Conditioning PFC
Welding
