NGTB40N120LWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications. Offering both low on?state voltage and minimal switching loss, the IGBT is well-suited for resonant or soft switching applications. Incorporated into the device is a rugged co?packaged free-wheeling diode with a low forward voltage.
NGTB40N120LWG Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 s Short?Circuit Capability
These are Pb?Free Devices
