IRG7PH35UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7PH35UPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2010
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
210W
Peak Reflow Temperature (Cel)
250
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
30 ns
Power - Max
210W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
160 ns
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
55A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.2V
Turn On Time
45 ns
Test Condition
600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 20A
Turn Off Time-Nom (toff)
400 ns
IGBT Type
Trench
Gate Charge
85nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
30ns/160ns
Switching Energy
1.06mJ (on), 620μJ (off)
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
105ns
Height
20.7mm
Length
15.87mm
Width
5.31mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3675 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.868000
$4.868
10
$4.592453
$45.92453
100
$4.332503
$433.2503
500
$4.087267
$2043.6335
1000
$3.855912
$3855.912
IRG7PH35UPBF Product Details
IRG7PH35UPBF Description
The IRG7PH35UPBF is an insulated gate bipolar transistor. Furthermore, an insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. A metal-oxide–semiconductor (MOS) gate arrangement controls four alternating layers (P–N–P–N).
IRG7PH35UPBF Features
? IGBT trench technique with low VCE (ON)
? Switching losses are minimal.
? 175°C maximum junction temperature
? RBSOA square
? Every single part was tested for ILM.
? VCE (ON) temperature co-efficient is positive
? An even distribution of parameters
? Free of lead
IRG7PH35UPBF Applications
? U.P.S
? Welding
? Solar Inverter
? Induction Heating
? Power Supplies
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