IRG4PC30SPBF

Name: IRG4PC30SPBF
Brand: Infineon Technologies
SKU: IRG4PC30SPBF
Availability: InStock

new-10%

Manufacturer part number:IRG4PC30SPBF

Manufacturer:Infineon Technologies

Description:IRG4PC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC30SPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2003
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	100W
Terminal Position	SINGLE
Current Rating	34A
Number of Elements	1
Element Configuration	Dual
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	19ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	34A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Turn On Time	40 ns
Test Condition	480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 18A
Turn Off Time-Nom (toff)	1550 ns
Gate Charge	50nC
Current - Collector Pulsed (Icm)	68A
Td (on/off) @ 25°C	22ns/540ns
Switching Energy	260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	590ns
Height	20.2946mm
Length	15.875mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free