SIGC100T65R3EX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC100T65R3EX1SA2 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Operating Temperature
-40°C~175°C TJ
Published
2016
Series
TrenchStop™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
650V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Dual Supply Voltage
650V
Current - Collector (Ic) (Max)
200A
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 200A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
600A
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.4V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3744 items
SIGC100T65R3EX1SA2 Product Details
SIGC100T65R3EX1SA2 Description
SIGC100T65R3EX1SA2 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SIGC100T65R3EX1SA2 operates between -55°C~150°C TJ, and its maximum collector current is 40A. The SIGC100T65R3EX1SA2 has three pins and it is available in Tube packaging way. SIGC100T65R3EX1SA2 has a 1350V Voltage - Collector Emitter Breakdown (Max) value.
SIGC100T65R3EX1SA2 Features
600V NPT technology
100μm chip
short circuit prove
positive temperature coefficient
easy paralleling
SIGC100T65R3EX1SA2 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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