NDS9948 Description
This P-channel MOSFET is a rugged gate version of on Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of gate drive rated voltages (4.5V-20V).
NDS9948 Applications
? Power management
? Load switch
? Battery protection
NDS9948 Features
? –2.3 A, –60 V RDS(ON) = 250 m? @ VGS = –10 V
RDS(ON) = 500 m? @ VGS = –4.5 V
? Low gate charge (9nC typical)
? Fast switching speed
? High performance trench technology for extremely
low RDS(ON)
? High power and current handling capability
